maximum ratings all ratings: t c = 25c unless otherwise speci ed. 050-7146 rev g 11-2009 caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. "coolmos ? comprise a new family of transistors developed by in neon technologies ag. "coolmos" is a trade- mark of in neon technologies ag" super junction mosfet c power semiconductors o o l mos apt77n60jc3 600v 77a 0.035 characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 500 a) drain-source on-state resistance 2 (v gs = 10v, i d = 60a) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = v dss , v gs = 0v, t j = 150c) gate-source leakage current (v gs = 20v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 5.4ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l dv / dt i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. drain-source voltage slope (v ds = 480v, i d = 77a, t j = 125c) repetitive avalanche current 7 repetitive avalanche energy 7 single pulse avalanche energy 4 unit volts amps volts watts w/c c v/ns amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms a na volts min typ max 600 .030 0.035 1.0 50 500 200 2.1 3 3.9 apt77n60jc3 600 77 231 20 30 568 4.55 -55 to 150 300 50 20 1 1800 ? ultra low r ds ( on ) ? low miller capacitance ? ultra low gate charge, q g ? avalanche energy rated ? popular sot-227 package ? n-channel enhancement mode microsemi website - http://www.microsemi.com unless stated otherwise, microsemi discrete mosfets contain a single mosfet die. this device is made with two parallel mosfet die. it is intended for switch-mode operation. it is not suitable for linear mode operation. sot-227 g s s d isotop "ul recongnized" file # 145592 g d s
characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energy turn-on switching energy 6 turn-off switching energy dynamic characteristics apt77n60jc3 050-7146 rev g 11-2009 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 36.0mh, r g = 25 , peak i l = 10a 5 dv / dt numbers re ect the limitations of the test circuit rather than the device itself. i s - i d 77a di / dt 700a/ s v r v dss t j 150 c 6 eon includes diode reverse recovery. see gures 18, 20. 7 repetitve avalanche causes additional power losses that can be calculated as p av =e ar *f microsemi reserves the right to change, without notice, the speci cations and information contained herein. characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = - 77a ) reverse recovery time (i s = - 77a , dl s /dt = 100a/ s, v r = 350v) reverse recovery charge (i s = - 77a , dl s /dt = 100a/ s, v r = 350v) peak diode recovery dv / dt 5 unit amps volts ns c v/ns min typ max 77 231 1 1.2 861 46 6 symbol r jc r ja min typ max 0.22 40 unit c/w characteristic junction to case junction to ambient symbol i s i sm v sd t rr q rr dv / dt symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 300v i d = 77a @ 25c resistive switching v gs = 10v v dd = 380v i d = 77a @ 125c r g = 0.9 inductive switching @ 25c v dd = 400v, v gs = 15v i d = 77a, r g = 5 inductive switching @ 125c v dd = 400v, v gs = 15v i d = 77a, r g = 5 min typ max 13600 4400 290 505 640 48 240 18 27 110 165 8 12 1670 2880 2300 3100 unit pf nc ns j source-drain diode ratings and characteristics thermal characteristics single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.25 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note:
4.5v 5v 5.5v 4v v gs =15 &10v 6v & 6.5v apt77n60jc3 typical performance r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) v gs =10v v gs =20v t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ <0.5 % duty cycle v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature 0 5 10 15 20 0 1 2 3 4 5 6 0 20 40 60 80 100 120 140 160 180 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 normalized to v gs = 10v @ 47a 200 180 160 140 120 100 80 60 40 20 0 80 70 60 50 40 30 20 10 0 3 2.5 2.0 1.5 1.0 0.5 0 200 180 160 140 120 100 80 60 40 20 0 1.40 1.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 0.85 1.2 1.1 1.0 0.9 0.8 0.7 0.6 i d = 47a v gs = 10v 0.00999 0.0212 0.0724 0.00421 0.00198 0.0129 dissipated power (watts) t j (c) t c (c) z ext are the external thermal impedances: case to sink, sink to ambient, etc. set to zero when modeling only the case to junction. z ext 0.116 0.314 050-7146 rev g 11-2009
apt77n60jc3 typical performance c rss c iss c oss v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 0 10 20 30 40 50 0 100 200 300 400 500 600 700 800 0.3 0.5 0.7 0.9 1.1 1.3 1.5 16 12 8 4 0 t j =+150c t j =+25c i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 400v r g = 5 t j = 125c l = 100 h e on e off t r t f switching energy ( m j) t d(on) and t d(off) (ns) switching energy ( m j) t r and t f (ns) 10 30 50 70 90 110 130 150 10 30 50 70 90 110 130 150 10 30 50 70 90 110 130 150 0 5 10 15 20 25 30 35 40 45 50 v dd = 400v i d = 77a t j = 125c l = 100 h e on includes diode reverse recovery. v ds = 300v v ds = 120v v ds = 480v i d = 77a t d(on) t d(off) e on e off 600 500 400 300 200 100 0 8000 7000 6000 5000 4000 3000 2000 1000 0 v dd = 400v r g = 5 t j = 125c l = 100 h v dd = 400v r g = 5 t j = 125c l = 100 h e on includes diode reverse recovery. 60,000 10,000 1,000 100 10 200 100 10 1 250 200 150 100 50 0 16000 14000 12000 10000 8000 6000 4000 2000 0 0.1 1 10 100 1000 1 10 100 800 1ms 100ms dc line 100 s 10ms 10 s 050-7146 rev g 11-2009
10% t d(on) 10% t r 90% 5% t collector current collector voltage gate voltage t j = 125 c switching energy 5 % t t j = 125 c collector voltage collector current gate voltage 90% 90% t f t d(off) 10% switching energy 0 apt77n60jc3 figure 18, turn-on switching waveforms and de nitions figure 19, turn-off switching waveforms and de nitions sot-227 (isotop ? ) package outline 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * source drain gate * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) * source source terminals are shorted internally. current handling capability is equal for either source terminal. i c d.u.t. apt30df60 v ce figure 20, inductive switching test circuit v dd g microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157, 886 6,939,743 7,342,262 and foreign patents. us and foreign patents pending. all rights reserved. 050-7146 rev g 11-2009
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